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P06P03LDG

Part Number	P06P03LDG
Manufacturer	UNIKC
Description	MOSFET
Published	Feb 6, 2017
Detailed Description	P06P03LDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 45mΩ @VGS = -10V ID -12A TO-252...
Datasheet	P06P03LDG PDF File

Overview

P06P03LDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 45mΩ @VGS = -10V ID -12A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -12 -10 -30 Avalanche Current IAS -29 Avalanche Energy L = 0.
1mH EAS 42 Power Dissipation TC = 25 °C TC = 100 °C PD 48 20 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by ma...

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