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IRF1404ZS

Part Number	IRF1404ZS
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Mar 11, 2017
Detailed Description	PD - 94634B Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Swit...
Datasheet	IRF1404ZS PDF File

Overview

PD - 94634B Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Absolute Maximum Ratings G TO-220AB IRF1404Z Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited...

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