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WFU5N65L

Winsemi
Part Number WFU5N65L
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 21, 2017
Detailed Description WFU5N65L Product Description Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical ...
Datasheet PDF File WFU5N65L PDF File

WFU5N65L
WFU5N65L

Overview
WFU5N65L Product Description Silicon N-Channel MOSFET Features � 4.
5A,650V,RDS(on)(Max2.
5Ω)@VGS=10V � Low Crss (typical 3.
62pF ) � Fast switching � 100% avalanche tested � Improved dv/dt capability � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
D G S G D S TO-251 Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode...


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