MOSFET
Description
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
500V
D
RDSON (MAX.)
1.85Ω
ID 5A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current...
Similar Datasheet
- EMD05N50A MOSFET - Excelliance MOS
- EMD05N50CS MOSFET - Excelliance MOS
- EMD05N50F MOSFET - Excelliance MOS