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WNMD2165

Will Semiconductor
Part Number WNMD2165
Manufacturer Will Semiconductor
Description Dual N-Channel MOSFET
Published Apr 30, 2017
Detailed Description WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000...
Datasheet PDF File WNMD2165 PDF File

WNMD2165
WNMD2165

Overview
WNMD2165 Dual N-Channel, 60V, 0.
32A, Power MOSFET VDS (V) Rds(on) (Ω) 1.
4@ VGS=10V 60 1.
7@ VGS=4.
5V ESD Rating:2000V HBM Descriptions The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2165 is Pb-free and Halogen-free.
WNMD2165 Http//:www.
sh-willsemi.
com SOT-363 D1 G2 S2 6 54 1 23 S1 G1 D2 Features Pin configuration (Top view)  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-363 Applications  Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit  Power Switch  Load Switch  Charging 6 54 65* 1 23 65 = Device Code * = Month (A~Z) Marking Order information Device Package Shipping WNMD2165-6/TR SOT-363 30...


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