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WNMD2167

Dual N-Channel MOSFET

Description

WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.016@ VGS=4.5V 0.018@ VGS=3.1V 0.020@ VGS=2.5V Descriptions The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, ...

Will Semiconductor

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