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WNMD2180

Part Number	WNMD2180
Manufacturer	WillSEMI
Description	MOSFET
Published	May 1, 2017
Detailed Description	WNMD2180 Dual N-Channel, 20V, 11A, Power MOSFET VDS (V) 20 Typical Rds(on) (mΩ) 8.5@ VGS=4.5V 8.9@ VGS=3.8V 9.6@ VGS=...
Datasheet	WNMD2180 PDF File

Overview

WNMD2180 Dual N-Channel, 20V, 11A, Power MOSFET VDS (V) 20 Typical Rds(on) (mΩ) 8.
5@ VGS=4.
5V 8.
9@ VGS=3.
8V 9.
6@ VGS=3.
1V 11@ VGS=2.
5V ESD Protected Descriptions The WNMD2180 is Dual N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2180 is Pb-free and Halogen-free.
Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package PDFN3×3-8L Applications  Driver for Relay, Solenoid, Motor, ...

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