DatasheetsPDF.com

2N3497

Part Number	2N3497
Manufacturer	Motorola
Description	GENERAL PURPOSE TRANSISTOR
Published	May 9, 2017
Detailed Description	2N3494 2N3495 CASE 31-03, STYLE 1 TO-39 (TO-205AD) 2N3496 2N3497 CASE 22-03, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE TR...
Datasheet	2N3497 PDF File

Overview

2N3494 2N3495 CASE 31-03, STYLE 1 TO-39 (TO-205AD) 2N3496 2N3497 CASE 22-03, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO VCBO v EBO "C @Total Device Dissipation T"a = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C* Derate above 25°C PD pd Operating and Storage Junction Temperature Range Tj, Tst g •Indicates Data in addition to JEDEC Requirements.
2N3494 2N3495 2N3496 2N3497 80 120 80 120 4.
5 100 2N3494 2N3496 2N3495 2N3497 600 3.
43 400 2.
28 3.
0 17.
2 1.
2 6.
85 - 65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C ELECTRICAL CHARACTERISTICS ! OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown VoltageO) dC = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 10 |uAdc, Ie = 0) 2N3494, 2N3496 2N3495, 2N3497 2N3494, 2N3496 ' 2N3495, 2N34...

Similar Datasheet

2N340 N-P-N GROWN SILICON TRANSISTORS - New Jersey Semi-Conductor
2N341 N-P-N GROWN SILICON TRANSISTORS - New Jersey Semi-Conductor
2N3410DCSM Dual Bipolar NPN Devices - Semelab Plc
2N3414 NPN SILICON TRANSISTOR - Micro Electronics
2N3414 NPN SILICON TRANSISTOR - Central Semiconductor
2N3415 NPN General Purpose Amplifier - Fairchild Semiconductor
2N3415 NPN SILICON TRANSISTOR - Central Semiconductor
2N3415 Silicon NPN Transistor - NTE
2N3416 NPN Amplifier - Fairchild Semiconductor
2N3416 NPN Amplifier - MCC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)