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MJE170

Part Number	MJE170
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistors
Published	May 16, 2017
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -40V ·DC Current Gain—...
Datasheet	MJE170 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -40V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.
5 A = 12(Min) @ IC= -1.
5 A ·Complement to the NPN MJE180 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier applications.
·Low current high speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-peak -6 A IB Base Current Collector Power Dissipation PC Ta...

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