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BF259

Part Number	BF259
Manufacturer	Multicomp
Description	High Voltage Power Transistors
Published	Jun 12, 2017
Detailed Description	High Voltage Power Transistor Pin Configuration 1. Emitter 2. Base 3. Collector Features: • Devices with breakdown v...
Datasheet	BF259 PDF File

Overview

High Voltage Power Transistor Pin Configuration 1.
Emitter 2.
Base 3.
Collector Features: • Devices with breakdown voltages of 160V minimum • NPN Silicon High Voltage Power Transistors Absolute Maximum Ratings: (Ta = 25°C unless otherwise specified) Characteristic Collector Base Voltage Collector Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current-Peak Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating Storage Temperature Range Thermal Resistance Junction to Ambient in Free Air Junction to Case Symbol VCBO VCES VEBO IC ICM PD Tj, Tstg Rth(j-a) Rth(j-c) Value 300 5 100 300 1 5.
7 5 28.
57 -65 to +20...

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