General Purpose Transistor
MMBT5401-G (PNP)
RoHS Device
Features
-Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching.
Diagram:
Collector 3
1 Base
Marking: 2L
2 Emitter
0.056(1.40) 0.047(1.20)
0.041(1.05) 0.035(0.90)
SOT-23
0.119(3.00) 0.110(2.80)
3
12
0.079(2.00) 0.0...
