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IRFB830

JCET
Part Number IRFB830
Manufacturer JCET
Description MOSFET
Published Jul 9, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263 Plastic-Encapsulate MOSFETS IRFB830 MOSFET( N-Channel ) FEATU...
Datasheet PDF File IRFB830 PDF File

IRFB830
IRFB830

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-263 Plastic-Encapsulate MOSFETS IRFB830 MOSFET( N-Channel ) FEATURES .
Dynamic dv/dt Rating .
Repetitive Avalanche Rated .
Fast Switching .
Ease of Paralleling .
Simple Drive Requirement TO-263 1.
G 2.
D 3.
S 123 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter ID @TC=25℃ ID @TC=100℃ IDM Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current (note 1) PD Power Dissipation RθJA VGS Thermal Resistance from Junction to Ambient Gate-Souse Voltage EAS Single Pulse Avalanche Energy (note2) IAR Avalanche Current (note 1) EAR Repetitive Avalanche Energy (note 1) dv/dt Peak Diode...


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