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2SC2717

LGE
Part Number 2SC2717
Manufacturer LGE
Description NPN Transistor
Published Jul 16, 2017
Detailed Description 1. BASE 2. EMITTER 3. COLLECTOR 2SC2717(NPN) TO-92 Bipolar Transistors TO-92 Features High Gain: Gpe =33 dB ( Typ. ) (...
Datasheet PDF File 2SC2717 PDF File

2SC2717
2SC2717

Overview
1.
BASE 2.
EMITTER 3.
COLLECTOR 2SC2717(NPN) TO-92 Bipolar Transistors TO-92 Features High Gain: Gpe =33 dB ( Typ.
) ( f =45MHZ) Good Linearity of hFE.
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 Collector cut-off current ICBO VCB=30V,IE=0 Emitter cut-off current IEBO VEB=3V,IC=0 DC current gain hFE VCE=12.
5V,IC=12.
5mA Collector-emitter saturation voltage VCE(sat) IC...


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