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KTC3875GR-G

Part Number	KTC3875GR-G
Manufacturer	Comchip
Description	General Purpose Transistor
Published	Jul 23, 2017
Detailed Description	General Purpose Transistor KTC3875GR-G (NPN) RoHS Device Features - High hFE - Low noise Circuit Diagram 1 Base Colle...
Datasheet	KTC3875GR-G PDF File

Overview

General Purpose Transistor KTC3875GR-G (NPN) RoHS Device Features - High hFE - Low noise Circuit Diagram 1 Base Collector 3 2 Emitter 0.
055(1.
40) 0.
047(1.
20) SOT-23 0.
118(3.
00) 0.
110(2.
80) 3 1 : BASE 2 : EMITTER 3 : COLLECTOR 12 0.
079(2.
00) 0.
071(1.
80) Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector power dissipation PC 150 mW Thermal resistance from junction to ambient RθJA 833 °C/W Junction temperature range TJ 150 °C Storage temperature range Tstg -55~+150 °C 0.
045(1.
15) 0.
035(0.
90) 0.
00...

Similar Datasheet

KTC3875GR-G General Purpose Transistor - Comchip

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