Silicon N Channel MOS FET
Description
2SK3380
Silicon N Channel MOS FET High Speed Switching
Features
Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
4 V gate drive device.
Outline
SPAK
ADE-208-806 (Z) 1st.Edition. June 1999
D G
S
123
1. Source 2. Drain 3. Gate
2SK3380
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to s...
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