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2SA683

CHINA BASE
Part Number 2SA683
Manufacturer CHINA BASE
Description PNP Silicon Epitaxial Planar Transistor
Published Aug 17, 2017
Detailed Description 2SA683 / 2SA684 PNP Silicon Epitaxial Planar Transistor for low frequency power amplification and driver amplification ...
Datasheet PDF File 2SA683 PDF File

2SA683
2SA683

Overview
2SA683 / 2SA684 PNP Silicon Epitaxial Planar Transistor for low frequency power amplification and driver amplification The transistor is subdivided into three group, Q, R and S according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage 2SA683 2SA684 2SA683 2SA684 Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1.
Emitter 2.
Collector 3.
Base TO-92 Plastic Package Weight approx.
0.
19g Symbol -VCBO -VCEO -VEBO -IC -IP Ptot Tj TS Value 30 50 25 40 5 1 1.
5 1 150 - 55 to + 150 Unit V V V A A W OC OC Characteristics at Tamb = 25 OC Parameter Symbol Min.
Typ.
Max.
Unit DC Current Gain at -VCE = 10 V, -IC = 500 mA Current Gain Group Q hFE 85 - 170 - R hFE 120 - 240 - S hFE 170 - 340 - at -VCE = 5 V, -IC = 1 A hFE 50 - -- Co...


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