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PH3134-10M

MA-COM
Part Number PH3134-10M
Manufacturer MA-COM
Description Radar Pulsed Power Transistor
Published Aug 29, 2017
Detailed Description PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Features  NPN silicon microwave power ...
Datasheet PDF File PH3134-10M PDF File

PH3134-10M
PH3134-10M

Overview
PH3134-10M Radar Pulsed Power Transistor 10W, 3.
1-3.
4 GHz, 100µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/ceramic package  RoHS compliant Outline Drawing Rev.
V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 60 3.
0 1.
2 70 -65 to +200 200 Units V V A W °C °C...


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