NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR
DIE SIZE METALLIZATION
Top Back DIE THICKNESS PASSIVATION BONDING PAD SIZE Emitter Base
350µm×350µm
Al V/ Ni/Au Typ. 220µm Silicon-Nitride
140µm×140µm 110µm×110µm
H9014
hFE CLASSIFICATION
Classification hFE
A 60~150
B 100~300
CD 200~600 400-1000
Collector ...
