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MBRB3030CTLG

ON Semiconductor

Power Rectifier


Description
MBRB3030CTLG, NRVBB3030CTLG SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features  Dual Diode Construction, May be Paralleled for Higher Current Output  Guard−Ring for Stress Protection  Low Forward Voltage Drop  125C Operating Junction Temperature  Maximum Die Size  Sh...



ON Semiconductor

MBRB3030CTLG

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