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BUZ205

Siemens Semiconductor Group
Part Number BUZ205
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description SIPMOS® Power Transistor q N channel q Enhancement mode q FREDFET BUZ 205 Type BUZ 205 VDS 400 V ID 6.0 A RDS (on) ...
Datasheet PDF File BUZ205 PDF File

BUZ205
BUZ205

Overview
SIPMOS® Power Transistor q N channel q Enhancement mode q FREDFET BUZ 205 Type BUZ 205 VDS 400 V ID 6.
0 A RDS (on) 1.
0 Ω Package 1) TO-220 AB Ordering Code C67078-A1401-A2 Maximum Ratings Parameter Continuous drain current, TC = 35 ˚C Pulsed drain current, TC = 25 ˚C Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Power dissipation, TC = 25 ˚C Operating and storage temperature range Thermal resistance, chip-case DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values 6.
0 24 400 400 ± 20 75 – 55 .
.
.
+ 150 ≤ 1.
67 E 55/150/56 W ˚C K/W – V Unit A ID ID puls VDS VDGR VGS Ptot Tj , Tstg Rth JC 1) See chapter Package Outlines.
Semiconductor Group 508 BUZ 205 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
Static characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.
25 mA Gate threshold voltage VGS = VDS , ID = 1 mA Zero gate voltage drain current Values typ.
max.
Unit V(B...


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