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BFS483

Part Number	BFS483
Manufacturer	Infineon Technologies AG
Description	Low Noise Silicon Bipolar RF Transistor
Published	Mar 23, 2005
Detailed Description	Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA ...
Datasheet	BFS483 PDF File

Overview

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.
9 dB at 900 MHz • Two (galvanic) internal isolated Transistor in one package • For orientation in reel see package information below • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available BFS483 4 5 6 3 2 1 C1 E2 B2 654 TR2 TR1 123 B1 E1 C2 EHA07196 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS483 Marking Pin Configuration Package RHs 1=B 2=E 3=C 4=B 5=E 6=C SOT363 1 2013-07-25 BFS483 Maximum Ratings at TA = 25 °C,...

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