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BFT46

NXP
Part Number BFT46
Manufacturer NXP
Description N-channel silicon FET
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors...
Datasheet PDF File BFT46 PDF File

BFT46
BFT46

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon FET DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope.
The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits.
PINNING 1 = drain 2 = source 3 = gate Note : Drain and source are interchangeable.
Marking code BFT46 = M3p Fig.
1 Simplified outline and symbol, SOT23.
BFT46 handbook, halfpage 3 d s g 1 Top view 2 MAM385 QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Total power dissipation up to Tamb = 40 °C Drain current VDS = 10 V; VGS = 0 Transfer admittance (common source) ID = 0,2 mA; VDS = 10 V; f = 1 kHz Equivalent noise voltage VDS = 10 V; ID = 200 µA; B = 0,6 to 100 Hz Vn < 0,5 µV  yfs  > 0,5 mS IDSS > < 0,2 mA 1,5 mA ±VDS −VGSO Ptot max.
max.
max.
25 V 25 V 250 mW December 1997 2 Philips Semiconductors Product specification N-channel silicon FET RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Gate-source voltage (open drain) Drain current Gate current Total power dissipation up to Tamb = 40 Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient(1) Note 1.
Mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm.
CHARACTERISTICS Tj = 25 °C unless otherwise specified Gate cut-off current −VGS = 10 V; VDS = 0 Drain current VDS = 10 V; VGS = 0 Gate-source voltage ID = 50 µA; VDS = 10 V Gate-source cut-off voltage ID = 0,5 nA; VDS = 10 V y-parameters at f = 1 kHz; VDS = 10 V; VGS = 0; Tamb = 25 °C Transfer admittance Output admittance VDS = 10 V; ID = 200 µA; Tamb = 25 °C Transfer admittance Output admittance Input capacitance at f = 1 MHz; VDS = 10 V; VGS = 0; Tamb = 25 °C Feedback c...


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