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BFT92

Infineon Technologies AG
Part Number BFT92
Manufacturer Infineon Technologies AG
Description PNP Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFT92 PNP Silicon RF Transistor  For broadband amplifiers up to 2 GHz 3 at collector currents up to 20 mA  Complemen...
Datasheet PDF File BFT92 PDF File

BFT92
BFT92

Overview
BFT92 PNP Silicon RF Transistor  For broadband amplifiers up to 2 GHz 3 at collector currents up to 20 mA  Complementary type: BFR 92P (NPN) 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFT92 Maximum Ratings Parameter W1s 1=B 2=E 3=C SOT23 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS  78 °C 1) Junction temperature Ambient temperature Storage temperature Thermal Resistance 15 20 20 2 25 3 200 150 -65 .
.
.
150 -65 .
.
.
150 V mA mW °C Junction - soldering point 2) RthJS  360 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-16-2001 BFT92 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 15 50 IEBO 10 ICBO 100 V(BR)CEO 15 typ.
max.
Unit V nA µA - 2 Jul-16-2001 BFT92 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.
5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.
8 GHz Power gain, maximum available 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.
8 GHz Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.
8 GHz |S21e|2 11.
5 6 Gma 13.
5 8 F 2 3.
2 Ceb 0.
77 Cce 0.
25 Ccb 0.
54 0.
8 ...


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