Schottky Barrier Diode
Description
Production specification
Schottky Barrier Diode
FEATURES
Low reverse leakage—IR=200nA(Max.). Very Low Capacitance—1.0pF @20V. Extremely Low minority carrier lifetime. High reverse leakage—70V(min.)
Pb
Lead-free
MMDL770
APPLICATIONS
For high-efficiency UHF and VHF detector applications.
SOD-323
ORDERING INFORMATION
Type No.
Marking
MMDL770...
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