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MRF21120R6

Freescale Semiconductor
Part Number MRF21120R6
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistor
Published Mar 3, 2018
Detailed Description Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET De...
Datasheet PDF File MRF21120R6 PDF File

MRF21120R6
MRF21120R6

Overview
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• W - CDMA Performance @ - 45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power — 14 Watts (Avg.
) Power Gain — 11.
5 dB Efficiency — 16% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 120 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for M...


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