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MRF21120

Part Number	MRF21120
Manufacturer	Motorola
Description	RF POWER FIELD EFFECT TRANSISTOR
Published	Jan 5, 2015
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21120/D The RF Sub–Micron MOSFET Line RF Power Field E...
Datasheet	MRF21120 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21120/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
• W–CDMA Performance @ –45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power — 14 Watts (Avg.
) Power Gain — 11.
5 dB Efficiency — 16% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters MRF21120 2170 MHz, 120 W, 28 V LATERAL N–CHANNEL RF POWER MOSFET CASE 375D–04, STYLE 1 NI–12...

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