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D1412

Silicon NPN Power Transistor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RAT...

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