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IXGT28N120BD1

High Voltage IGBT

Description

High Voltage IGBT w/ Diode IXGH28N120BD1 IXGT28N120BD1 VCES = IC25 VCE(sat) = ≤ tfi(typ) = 1200V 50A 3.5V 170ns TO-247AD (IXGH) Symbol VCES VCGR VGES VGEM IC25 IICF91000 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C ( Chip Capability ) TTCC = 100...

IXYS

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IXGT28N120B High Voltage IGBT - IXYS Corporation
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