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BLP8G10S-45P

Part Number	BLP8G10S-45P
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 27, 2018
Detailed Description	BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor Rev. 3 — 8 January 2016 Product data sheet 1. Product profile 1.1 ...
Datasheet	BLP8G10S-45P PDF File

Overview

BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor Rev.
3 — 8 January 2016 Product data sheet 1.
Product profile 1.
1 General description The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production circuit.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 960 28 2.
5 20.
8 19.
8 49 [1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01% probability on CCDF; carrier spacing = 5 MHz; per section unless otherwise spec...

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