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BL2N60F

GME
Part Number BL2N60F
Manufacturer GME
Description N-Channel Power MOSFET
Published May 18, 2018
Detailed Description 2 Amps, 600 Volts N-CHANNEL MOSFET FEATURES  RDS(on)=3.8Ω@VGS=10V. Pb  Ultra Low gate charge (typical 9.0nC) Lead-...
Datasheet PDF File BL2N60F PDF File

BL2N60F
BL2N60F

Overview
2 Amps, 600 Volts N-CHANNEL MOSFET FEATURES  RDS(on)=3.
8Ω@VGS=10V.
Pb  Ultra Low gate charge (typical 9.
0nC) Lead-free  Low reverse transfer capacitance (Crss = typical 5.
0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL2N60F ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDSS ID IDP VGSS Drain-Source voltage Drain current continuous Drain current Pulsed (Note2) Gate -Source voltage (TC=25℃) (TC=100℃) 600 2.
0 1.
26 8.
0 ±30 V A A V IAR EAR EAS dv/dt Avalanche Current (Note2) 2.
0 Avalanche Energy Repetitive(Note 2) 4.
5 Avalanche Energy Single Pulse(Note 3) 140 Peak Diode Recovery dv/dt (Note4) 4.
5 A mJ mJ V/ns Power Dissipation (TC=25℃) 45 W PD Derate above 25℃ 0.
36 W/℃ TJ Junction Temperature +150 ℃ TSTG RθJA Storage Temperature Thermal Resistance Junction-Ambien...


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