P-Channel Power Mosfet
Description
Production specification
P-Channel Enhancement Mode Field Effect Transistor BL2303
FEATURES
Electrostatic Sensitive Devices.
VDS (V) = -30V ID = -2.7A(VGS =-10V) RDS(ON) < 190mΩ (VGS = -10V)
RDS(ON) < 330mΩ (VGS = -4.5V)
Pb
Lead-free
APPLICATIONS
P-channel enhancement mode effect transistor. Switching application.
ORDERING INFORMATION
Type N...
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