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BCR108W

Siemens Semiconductor Group
Part Number BCR108W
Manufacturer Siemens Semiconductor Group
Description NPN Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias...
Datasheet PDF File BCR108W PDF File

BCR108W
BCR108W

Overview
BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.
2kΩ, R2=47kΩ) Type BCR 108W Marking Ordering Code WHs Q62702-C2275 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 124°C Junction temperature Storage temperature Symbol Values 50 50 5 10 100 250 150 - 65 .
.
.
+ 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 240 ≤ 105 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 0.
5cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 108W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 50 2.
2 0.
047 - V IC = 100 µA, IB = 0 Collector...


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