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BCR169S

Infineon Technologies AG
Part Number BCR169S
Manufacturer Infineon Technologies AG
Description PNP Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR169S PNP Silicon Digital Transistor Array  Switching circuit, inverter, interface circuit, 4 5 6 driver circuit  ...
Datasheet PDF File BCR169S PDF File

BCR169S
BCR169S

Overview
BCR169S PNP Silicon Digital Transistor Array  Switching circuit, inverter, interface circuit, 4 5 6 driver circuit  Two ( galvanic) internal isolated Transistors with good matching in one package  Built in bias resistor ( R1=4.
7k) C1 6 B2 5 E2 4 2 1 3 VPS05604 R1 TR1 R1 TR2 1 E1 2 B1 3 C2 EHA07266 Type BCR169S Maximum Ratings Parameter Marking WSs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 5 15 100 250 150 -65 .
.
.
150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 1) RthJS  140 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-13-2001 BCR169S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.
3 V Input resistor R1 Vi(on) Vi(off) VCEsat hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ.
max.
Unit 50 50 5 120 0.
4 0.
5 3.
2 4.
7 100 630 0.
3 0.
8 1.
1 6.
2 V nA V k AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 150 MHz 1) Pulse test: t < 300s; D < 2% 2 Dec-13-2001 BCR169S DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) 10 3 VCEsat = f (IC), hFE = 20 10 2 - mA hFE 10 2 10 1 10 1 IC 10 0 10 0 -1 10 0 1 10 10 mA 10 2 10 -1 0.
00 0.
1...


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