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BCR169W

Infineon Technologies AG
Part Number BCR169W
Manufacturer Infineon Technologies AG
Description PNP Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR169.../SEMB3 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built ...
Datasheet PDF File BCR169W PDF File

BCR169W
BCR169W

Overview
BCR169.
.
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/SEMB3 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.
7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR169/F/L3 BCR169T/W C 3 BCR169S/U SEMB3 C1 6 B2 5 E2 4 R1 R1 TR1 R1 TR2 1 B 2 E EHA07180 1 E1 2 B1 3 C2 EHA07266 Type Marking Pin Configuration Package BCR169 BCR169F BCR169L3 BCR169S BCR169T BCR169U BCR169W SEMB3 WSs WSs WS WSs WSs WSs WSs WS 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - - - SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 May-18-2004 BCR169.
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/SEMB3 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR169, TS ≤ 102°C BCR169F, TS ≤ 128°C BCR169L3, TS ≤ 135°C BCR169S, T S ≤ 115°C BCR169T, TS ≤ 109°C BCR169U, TS ≤ 118°C BCR169W, TS ≤ 124°C SEMB3, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR169 BCR169F BCR169L3 BCR169S BCR169T BCR169U BCR169W SEMB3 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 15 100 200 250 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 .
.
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150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 ≤ 300 °C Unit K/W 2 May-18-2004 BCR169.
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/SEMB3 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1 50 5 120 0.
4 0.
5 3.
2 4.
7 100 630 0.
3 0.
8 1.
1 6.
2 kΩ Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff cu...


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