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CEM2108E

CET
Part Number CEM2108E
Manufacturer CET
Description Dual N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CEM2108E Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 10A, RDS(ON) = 13mΩ @VGS =...
Datasheet PDF File CEM2108E PDF File

CEM2108E
CEM2108E

Overview
CEM2108E Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 10A, RDS(ON) = 13mΩ @VGS = 10V.
RDS(ON) = 14mΩ @VGS = 4.
5V.
RDS(ON) = 19mΩ @VGS = 2.
5V.
RDS(ON) = 27mΩ @VGS = 1.
8V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
D1 D1 D2 D2 8765 SO-8 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@TA = 25 C @TA = 70 C Drain Current-Pulsed a Maximum Power Dissipation@TA = 25 C @TA = 70 C VDS VGS ID IDM PD 20 ±12 10 7.
8 40 2.
0 1.
2...


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