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CEM2108

CET
Part Number CEM2108
Manufacturer CET
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published May 6, 2007
Detailed Description CEM2108 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) ...
Datasheet PDF File CEM2108 PDF File

CEM2108
CEM2108

Overview
CEM2108 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 9.
5A, RDS(ON) = 14mΩ @VGS = 4.
5V.
RDS(ON) = 20mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 8 D1 7 D2 6 D2 5 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±12 9.
5 35 2.
0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Therma...


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