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CEM3258A

Part Number	CEM3258A
Manufacturer	CET
Description	Dual N-Channel MOSFET
Published	Jun 12, 2018
Detailed Description	CEM3258A Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 7A, RDS(ON) = 28mΩ @VGS = ...
Datasheet	CEM3258A PDF File

Overview

CEM3258A Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V.
RDS(ON) = 40mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 7 IDM 28 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal...

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