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2N6851

TEMIC
Part Number 2N6851
Manufacturer TEMIC
Description P-Channel Enhancement-Mode Transistor
Published Jul 6, 2018
Detailed Description P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –200 rDS(on) (W) 0.80 ID (A) –4.0 Parametric lim...
Datasheet PDF File 2N6851 PDF File

2N6851
2N6851

Overview
P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –200 rDS(on) (W) 0.
80 ID (A) –4.
0 Parametric limits in accordance with MIL-S-19500/564 where applicable.
TO-205AF (TO-39) S S 1 G 2N6851 2 G 3 D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Avalanche Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.
) TC = 25_C TC = 100_C TC = 25_C TC = 100_C Thermal Resistance Ratings Symbol VDS VGS ID IDM IAR PD TJ, Tstg TL Limit –200 "20 –4.
0 –2.
4 –20 –3.
1 25 10 –55 to 150 300 Unit V A W _C Parameter Symbol Limit Unit Maximum Junction-to-Ambient Maximum Junction-to-Case RthJA RthJC 175 _C/W 5.
0 Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600.
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