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2N6366

Part Number	2N6366
Manufacturer	ETC
Description	NPN SILICON RF POWER TRANSISTOR
Published	Jul 12, 2018
Detailed Description	2N6366 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTOR . designed for operation in driver and predriver stages fo...
Datasheet	2N6366 PDF File

Overview

2N6366 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTOR .
designed for operation in driver and predriver stages for high power linear amplifiers, 2.
0 to 30 MHz.
• Optimized for Operation from a 12.
5 Volt Supply • Power Gain @ 2.
5 W (PEP) = 17 dB (Min) • I ntermodulation Distortion at Rated Power Output IMD = -35 dB (Max) 2.
5 W (PEP)-30 MHz RFPOWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating * COllector-Emitter Voltage * Collector-Base Voltage * Emitter-Base Voltage * Collector Current - Continuous *Total Device Dissipation@Tc = 25°C Derate above 25°C • Storage Temperature Range Maximum Stud Torque (11 Symbol VCEO VCBO VEBO IC Po T stg - Value 18 36 4.
0 1.
0 10 57.
2 -65 to +200 2.
1...

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