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2SB595

Toshiba

SILICON PNP TRANSISTOR


Description
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES High Breakdown Voltage : VCEO=-100V Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.) Complementary to 2SD525. Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Bas...



Toshiba

2SB595

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