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2SB993

Part Number	2SB993
Manufacturer	Toshiba
Description	SILICON PNP TRANSISTOR
Published	Jul 17, 2018
Detailed Description	• SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB993 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATI...
Datasheet	2SB993 PDF File

Overview

• SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB993 HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES —.
High Collector Current : Ic 7A .
Low Collector Saturation Voltage : VC E(sat)=-0.
4V(Max.
) (at Ic=-4A) .
High Collector Power Dissipation : P C=40W (at Tc=25°C) .
Complementary to 2SD1363 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VcBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current IB Collector Power Dissipation Ta=25°C Tc=25°C PC Junction Temperature Storage Temperature Range T j T stg ELECTRICAL CHARACTERISTICS (Ta==25°C) RATING -70 -50 -5 -7 -1 UNIT V V V A A 1.
5...

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