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2SA1279

Toshiba

Silicon PNP Transistor


Description
—: ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES . Low Collector Saturation Voltage : VC E(sat)=-0.4V(Max.) (at I C=-3A) . High Speed Switching Time : t s tg=1.0/is(Typ. . Complementary to 2SC3239 MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO ...



Toshiba

2SA1279

PDF File 2SA1279 PDF File


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