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MJ10021

Part Number	MJ10021
Manufacturer	NTE
Description	NPN Silicon Power Darlington Transistor
Published	Aug 2, 2018
Detailed Description	MJ10012 NPN Silicon Power Darlington Transistor TO3 Type Package Description: The MJ10012 is high−voltage, high−current...
Datasheet	MJ10021 PDF File

Overview

MJ10012 NPN Silicon Power Darlington Transistor TO3 Type Package Description: The MJ10012 is high−voltage, high−current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications.
Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) D 175 Watts Capability at 50 Volts Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO .
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400V Collector−Emitter Voltage (RBE = 273 ), VCER .
550V Collector−Base Voltage, VCBO .
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