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MJ10021

Darlington Power Transistor

Description

MJ10021 Darlington Power Transistor NPN silicon power darlington transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications. Features: Continuous Collector Current - IC = 60A. Switching regu...

Multicomp

MJ10021 PDF File

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