High Power RF LDMOS FET
Description
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH16180B4 Product Datasheet V2.0
1300MHz-1600MHz, 180W, 28V High Power RF LDMOS FETs
Description
The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as...
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