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MR2006C

Part Number	MR2006C
Manufacturer	Innogration
Description	High Power RF LDMOS FET
Published	Aug 5, 2018
Detailed Description	MR2006C LDMOS TRANSISTOR Document Number: MR2006C Objective Datasheet V1.1 60W, 28V High Power RF LDMOS FETs Descript...
Datasheet	MR2006C PDF File

Overview

MR2006C LDMOS TRANSISTOR Document Number: MR2006C Objective Datasheet V1.
1 60W, 28V High Power RF LDMOS FETs Description The MR2006C is a 60-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz.
It can be used MR2006C in Class AB/B and Class C for all typical modulation formats.
It can also operate at lower voltage down to 12V with decreased power capability.
 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 400 mA, CW.
Frequency Gp (dB) P-1dB (W) 1000 MHz 20 60 D@P-1 (%) 60 Notice: It is recommended to operate this device only below 24V like 14V,12V etc, if operation band ...

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