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HY3215M

HOOYI
Part Number HY3215M
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Aug 19, 2018
Detailed Description HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) ...
Datasheet PDF File HY3215M PDF File

HY3215M
HY3215M

Overview
HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 150 ±25 175 -55 to 175 120 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480** 120 84 300 150 0.
5 62.
5 EAS Avalanche Energy, Single Pulsed L=0.
5mH Note * Repetitive rating ; pulse width limiited by junct...


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