N-Channel MOSFET
Description
Aug 2007
PFU1N70 / PFD1N70
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 4.8 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 12.0 Ω (Typ.) @VGS=10V
APPLICATION
Low power battery chargers Switch mode powe...
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