DatasheetsPDF.com

AFP2311

Alfa-MOS
Part Number AFP2311
Manufacturer Alfa-MOS
Description 20V P-Channel Enhancement Mode MOSFET
Published Nov 22, 2018
Detailed Description Alfa-MOS Technology General Description AFP2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Datasheet PDF File AFP2311 PDF File

AFP2311
AFP2311

Overview
Alfa-MOS Technology General Description AFP2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L ) AFP2311 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.
0A,RDS(ON)=56mΩ@VGS=4.
5V -20V/-3.
2A,RDS(ON)=70mΩ@VGS=2.
5V -20V/-2.
8A,RDS(ON)=100mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current cap...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)