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HM3018SR

H&M Semiconductor
Part Number HM3018SR
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description J M SOT-523 Plastic-Encapsulate MOSFETS HM3018SR N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX  8Ω@4V  13Ω@2.5V   ID 100...
Datasheet PDF File HM3018SR PDF File

HM3018SR
HM3018SR

Overview
J M SOT-523 Plastic-Encapsulate MOSFETS HM3018SR N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX  8Ω@4V  13Ω@2.
5V   ID 100mA SOT-523 1.
GATE 2.
SOURCE 3.
DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Easily designed drive circuits z Easy to parallel MARKING APPLICATION z Interfacing , Switching Equivalent Circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current RθJA Thermal Resistance, Junction-to-Ambient PD Power Dissipation TJ Junction Temperature Tstg Storage Temperature Value 30 ±20 0.
1 833 0.
15 150 -55~+150 Unit V V A ℃ /W W ℃ ℃ MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate –Source leakage current Gate Threshold Voltage Symbol VDS I...


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